PART |
Description |
Maker |
HCF4001BEY HCF4001BM1 HCF4001M013TR HCF4001B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:3V; Transistor Polarity:Dual P Channel; Power Dissipation:150W; C-E Breakdown Voltage:200V; DC Current Gain Min (hfe):35; Collector Current:15A; DC Current Gain Max (hfe):160 QUAD 2-INPUT NOR GATE
|
意法半导 STMICROELECTRONICS[STMicroelectronics]
|
2SB1561-Q |
Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-60V
|
TY Semiconductor Co., Ltd
|
C2611 |
Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
|
TY Semiconductor Co., Ltd
|
SMBTA1407 |
NPN Silicon Darlington Transistor High collector current Low collector-emitter saturation voltage
|
http://
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2SB1073 |
Low collector-emitter saturation voltage VCE(sat) Large peak collector current ICP
|
TY Semiconductor Co., Ltd
|
CM150DUS-12F |
IGBT Module; Continuous Collector Current, Ic:150A; Collector Emitter Saturation Voltage, Vce(sat):2V; Power Dissipation, Pd:520W; Collector Emitter Voltage, Vceo:600V 150 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc.
|
DC337-16-25-40 BC327-16 BC328-16 ON0144 BC328-25 |
Amplifier Transistors(PNP Silicon) From old datasheet system PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) CASE 29-04, STYLE 17 TO-2 (TO-26AA)
|
ON Semiconductor Siemens Semiconductor Group
|
MC68HCL05C8 MC68HSC05C8 68HC705C8 MC68HC05C8 MC68H |
TRANSISTOR,IGBT,N-CHAN,1.2kV V(BR)CES,25A I(C),TO-264AA IGBT; Continuous Collector Current, Ic:60A; Collector Emitter Saturation Voltage, Vce(sat):24V; Power Dissipation, Pd:200W; Collector Emitter Voltage, Vceo:900V; Transistor Polarity:N Channel PROGRAMMING REFRERENCE GUIDE 编程REFRERENCE指南
|
Motorola, Inc. Motorola Inc Motorola Mobility Holdings, Inc.
|
FS400R07A1E3 |
DC-collector current / diode forward current limited by power terminals
|
Infineon Technologies AG
|
BCP49 Q62702-C2137 BCP29 Q62702-C2136 |
From old datasheet system NPN Silicon Darlington Transistors (For general AF applications High collector current High current gain)
|
SIEMENS[Siemens Semiconductor Group]
|
HC5503C HC5503CCB HC5503CCP |
Unbalanced PBX/Key System SLIC, Subscriber Line Interface Circuit Unbalanced PBX/Key System SLIC/ Subscriber Line Interface Circuit Bipolar Transistor; Collector Emitter Voltage, Vceo:50V; Transistor Polarity:NPN; Power Dissipation:900mW; DC Current Gain Min (hfe):180; Collector Current:500A; Package/Case:3-TO-92
|
INTERSIL[Intersil Corporation]
|
BDP947 BDP949 Q62702-D1337 Q62702-D1335 |
NPN Silicon AF Power Transistors (For AF drivers and output stages High collector current High current gain) From old datasheet system
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] SIEMENS AG
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